Memory system and operating method thereof

ABSTRACT

A method for operating a memory system includes: performing a read operation in response to a first tag; performing a read operation in response to a second tag; performing a defense code operation corresponding to the first tag; performing an error correction code (KC) operation on data output through the defense code operation corresponding to the first tag; and performing a defense code operation corresponding to the second tag, wherein the read operation in response to the second tag is started before the ECC operation corresponding to the first tag is completed, and wherein the defense code operation corresponding to the second tag is performed using a result of the defense code operation corresponding to the first tag.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.15/926,074 filed on Mar. 20, 2018, which claims benefits of priority ofKorean Patent Application No, 10-2017-0103154 filed on Aug. 14, 2017.The disclosure of each of the foregoing application is incorporatedherein by reference in its entirety.

BACKGROUND Field of Invention

The present disclosure relates generally to a memory system and, moreparticularly, to an operating method for a memory system capable ofdecreasing the read latency of the memory system.

Description of Related Art

Memory devices are classified into volatile memory devices andnonvolatile memory devices. A major difference between volatile andnonvolatile memory devices is that nonvolatile memory devices retainstored data when power is turned off while volatile memory devices donot. Examples of nonvolatile memory devices are a read only memory(ROM), an electrically erasable programmable read-only memory (EEPROM),and the like.

The structure and operation of a flash memory device introduced as aflash EEPROM are different from those of typical EEPROMs. The flashmemory device may perform an electric erase operation in units of blocksand perform a program operation in units of bits.

Threshold voltages of a plurality of programmed memory cells included inthe flash memory device may be changed depending on several factors,such as, for example, floating gate coupling, charge loss as timeelapses, and the like.

A change in the threshold voltages of a plurality of memory cells maycause a read operation to fail. Typically, in order to prevent readoperation from being failed, an optimum read voltage is searched, andthe read operation may be retried using the searched optimum readvoltage. However, this may increase the read latency of the memorysystem employing the memory device.

SUMMARY

Various embodiments of the present disclosure provide an operatingmethod for a memory system which can decrease the read latency of thememory system.

According to an aspect of the present disclosure, there is provided amethod for operating a memory system, the method including: performing aread operation in response to a first tag; performing a read operationin response to a second tag; performing a defense code operationcorresponding to the first tag; performing an error correction code(ECC) operation on data output through the defense code operationcorresponding to the first tag; and performing a defense code operationcorresponding to the second tag, wherein the read operation in responseto the second tag is started before the ECC operation corresponding tothe first tag is completed, and wherein the defense code operationcorresponding to the second tag is performed using a result of thedefense code operation corresponding to the first tag.

According to another aspect of the present disclosure, there is provideda method for operating a memory system, the method including: performinga read operation in response to a first tag; performing a read retryoperation corresponding to a second tag; performing an ECC operation ondata output through the read retry operation corresponding to the secondtag; and performing a read retry operation corresponding to the firsttag, wherein the read operation in response to the first tag is startedbefore the entry of the read retry operation corresponding to the secondtag, and wherein the read retry operation corresponding to the first tagis performed based on a voltage condition of the read retry operationcorresponding to the second tag.

According to still another aspect of the present disclosure, there isprovided a method for operating a memory system, the method including:performing a read operation in response to a first tag; performing aread operation in response to a second tag; performing a defense codeoperation corresponding to the first tag; performing a program operationin response to a third tag; and performing a defense code operationcorresponding to the second tag after the program operation in responseto the third tag is completed, wherein the defense code operationcorresponding to the second tag is performed by using a result of thedefense code operation corresponding to the first tag.

According to still another aspect of the present disclosure, there isprovided a method for operating a memory system, the method including:performing first and second defense code operations corresponding tofirst and second read operations, respectively; and performing first andsecond ECC operations corresponding to the first and second defense codeoperations, respectively, wherein the second read operation is performedbefore completion of the first ECC operation, and wherein the seconddefense code operation is performed according to a result of the firstdefense code operation.

BRIEF DESCRIPTION OF THE DRAWINGS

Various exemplary embodiments of the present invention will now bedescribed more fully hereinafter with reference to the accompanyingdrawings; however, it is noted that the invention may be embodied indifferent forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the present invention to those skilled in the art.

In the drawing figures, dimensions may be exaggerated for clarity ofillustration. It will be understood that when an element is referred toas being “between” two elements, it can be the only element between thetwo elements, or one or more intervening elements may also be present.Like reference numerals refer to like elements throughout.

FIG. 1 is a diagram illustrating a memory system according to anembodiment of the present disclosure.

FIG. 2 is a diagram illustrating an exemplary configuration of a memorycontroller shown in FIG. 1.

FIG. 3 is a diagram illustrating an exemplary configuration of a memorydevice shown in FIG. 1.

FIG. 4 is a diagram illustrating an exemplary configuration of a memoryblock shown in FIG. 3.

FIG. 5 is a diagram illustrating an embodiment of a memory block that isthree-dimensionally configured.

FIG. 6 is a diagram illustrating an example of data of a logical pagecomprising a plurality of data sectors.

FIG. 7 is a diagram illustrating threshold voltage distributions ofmulti-bit memory cells and a read operation, in accordance with anembodiment of the present disclosure.

FIG. 8 is a diagram illustrating a method for performing a defense codeoperation in accordance with an embodiment of the present disclosure.

FIG. 9 is a diagram illustrating a method for performing a defense codeoperation in accordance with embodiment of the present disclosure.

FIG. 10 is a diagram illustrating a method for performing a defense codeoperation between a plurality of tags in accordance with an embodimentof the present disclosure.

FIG. 11 is a diagram illustrating a method for performing a defense codeoperation between a plurality of tags in accordance with an embodimentof the present disclosure.

FIG. 12 is a diagram illustrating a method for performing a defense codeoperation between a plurality of tags in accordance with an embodimentof the present disclosure.

FIG. 13 is a diagram illustrating a method for performing a defense codeoperation between a plurality of tags in accordance with an embodimentof the present disclosure.

FIG. 14 is a diagram illustrating an exemplary configuration of thememory system including the memory controller shown in FIG. 2 and thememory device shown in FIG. 3.

FIG. 15 is a diagram illustrating an exemplary configuration of thememory system including the memory controller shown in FIG. 2 and thememory device shown in FIG. 3.

FIG. 16 is a diagram illustrating an exemplary configuration of thememory system including the memory controller shown in FIG. 2 and thememory device shown in FIG. 3.

FIG. 17 is a diagram illustrating an exemplary configuration of thememory system including the memory controller shown in FIG. 2 and thememory device shown in FIG. 3.

DETAILED DESCRIPTION

In the following detailed description, only certain exemplaryembodiments of the present disclosure have been shown and described,simply by way of illustration. As those skilled in the art wouldrealize, the described embodiments may be modified in various differentways, all without departing from the spirit or scope of the presentdisclosure. Accordingly, the drawings and description are to be regardedas illustrative in nature and not restrictive.

In the entire specification, when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the another element or be indirectly connectedor coupled to the another element with one or more intervening elementsinterposed therebetween. In addition, when an element is referred to as“including” a component, this indicates that the element may furtherinclude another component instead of excluding another component unlessthere is different disclosure.

FIG. 1 is a diagram illustrating a memory system according to anembodiment of the present disclosure.

Referring to FIG. 1, the memory system 1000 may include a memory device1100 that stores data and a memory controller 1200 that controls thememory device 1100 under the control of a host 2000.

The host 2000 may communicate with the memory system 1000 by using aninterface protocol such as peripheral component interconnect-express(PCI-E), advanced technology attachment (ATA), serial ATA (SATA),parallel ATA (PATA), or serial attached SCSI (SAS). In addition,interface protocols between the host 2000 and the memory system 1000 arenot limited to the above-described examples, and may be one of otherinterface protocols such as a universal serial bus (USB), a multi-mediacard (MMC), an enhanced small disk interface (ESDI), and integrateddrive electronics (IDE).

The memory controller 1200 may control the overall operations of thememory system 1000, and control data exchange between the host 2000 andthe memory device 1100. For example, the memory controller 1200 mayprogram or read data by controlling the memory device 1100 in responseto a request of the host 2000. Also, the memory controller 1200 maystore information into main memory blocks and sub-memory blocks, whichare included in the memory device 1100. The memory controller mayselectively perform a program operation on a main memory block or asub-memory block of the memory device 1100 according to the amount ofdata loaded for the program operation. In some embodiments, the memorydevice 1100 may include a double data rate synchronous dynamic randomaccess memory (DDR SDRAM), a low power double data rate 4 (LPDDR4)SDRAM, a graphics double data rate (GDDR) SRAM, a low power DDR (LPDDR),a rambus dynamic random access memory (RDRAM), and a flash memory.

The memory device 1100 may perform a program, read or erase operationunder the control of the memory controller 1200.

FIG. 2 is a diagram illustrating the memory controller of FIG. 1.

Referring to FIG. 2, the memory controller 1200 may include a processor710, a memory buffer 720, an error correction code (ECC) circuit 730, ahost interface 740, a buffer control circuit 750, a memory interface760, a data randomizer 770 and a bus 780.

The bus 780 may be configured to provide one or more channels betweenthe components of the memory controller 1200.

The processor 710 may control the overall operations of the memorycontroller 1200, and perform a logical operation. The processor 710 maycommunicate with the external host 2000 through the host interface 740,and communicate with the memory device 1100 through the memory interface760. Also, the processor 710 may communicate with the memory buffer 720through the buffer control circuit 750. The processor 710 may control anoperation of the memory system 1000 by using the memory buffer 720 as aworking memory, a cache memory, or a buffer memory.

The processor 710 may queue a plurality of commands received from thehost 2000. Such an operation is referred to as a multi-queueingoperation or multi-queueing. In a multi-queueing operation, a queuedcommand is referred to as a tag or a queued tag. The processor 710 maysequentially transfer a plurality of queued tags to the memory device1100. Also, the processor 710 may a plurality of queued tags, of whichsequence is changed, to the memory device 1100. In other words, theprocessor 710 may use various methods including order of priority, crossreference, and the like in order to efficiently process the queued tags.

The memory buffer 720 may be used as the working memory, the cachememory, or the buffer memory of the processor 710. The memory buffer 720may store codes (program code, and data) and commands, which areexecuted by the processor 710. Suitable examples of the memory buffer720 may include a static RAM (SRAM) or a dynamic RAM (DRAM).

The ECC circuit 730 may perform an ECC operation. The ECC circuit 730may perform ECC encoding on data to be written in the memory device1100. The ECC encoded data may be transferred to the memory device 1100through the memory interface 760. The ECC circuit 730 may also performECC decoding on data received from the memory device 1100. The ECCcircuit 730 may receive data from the memory device 1100 through thememory interface 760. In an embodiment, the ECC circuit 730 may be acomponent of the memory interface 760.

The host interface 740 is configured to communicate with the externalhost 2000 under the control of the processor 710. The host interface 740may be implemented as at least one of a universal serial bus (USB), aserial AT attachment (SATA), a high speed interchip (HSIC), a smallcomputer system interface (SCSI), Firewire, a peripheral componentinterconnection (PCI), a PCI express (PCIe), a nonvolatile memoryexpress (NVMe), a universal flash storage (UFS), a secure digital (SD),a multimedia card (MMC), an embedded MMC (eMMC), a dual in-line memorymodule (DIMM), a registered DIMM (RDIMM), a load reduced DIMM (LRDIMM)and the like.

The buffer control circuit 750 is configured to control the memorybuffer 720 under the control of the processor 710.

The memory interface 760 is configured to communicate with the memorydevice 1100 under the control of the processor 710. The memory interface760 may communicate a command, an address, and data with the memorydevice 1100 through one or more channels of the bus 780.

In a variation of the illustrated embodiment of FIG. 2, the memorycontroller 1200 may not include the memory buffer 720 and the buffercontrol circuit 750. The processor 710 may load codes from a nonvolatilememory device (e.g., a read only memory (ROM)) provided inside thememory controller 1200. As another example, the processor 710 may loadcodes from the memory device 1100 through the memory interface 760.

The data randomizer 770 may randomize data or de-randomize therandomized data. The data randomizer 770 may perform a data randomizingoperation on data to be written in the memory device 1100. Therandomized data may be transferred to the memory device 1100 through thememory interface 760. The data randomizer 770 may also perform a datade-randomizing operation on data received from the memory device 1100through the memory interface 760. In a variation of the illustratedembodiment of FIG. 2, the data randomizer 770 may be included as acomponent of the memory interface 760.

In an embodiment, the bus 780 of the memory controller 1200 may bedivided into a control bus and a data bus. The data bus may beconfigured to transmit data in the memory controller 1200, and thecontrol bus may be configured to transmit control information such as acommand and an address in the memory controller 1200. The data bus andthe control bus are separated from each other, and may not interfere orinfluence with each other. The data bus may be coupled to the hostinterface 740, the buffer control circuit 750, the ECC circuit 730, andthe memory interface 760. The control bus may be coupled to the hostinterface 740, the processor 710, the buffer control circuit 750, thememory buffer 720, and the memory interface 760.

FIG. 3 is a diagram illustrating the memory device of FIG. 1.

Referring to FIG. 3, the memory device 1100 may include a memory cellarray 100 that stores data. The memory device 1100 may includeperipheral circuits 200 configured to perform a program operation forstoring data in the memory cell array 100, a read operation foroutputting the stored data, and an erase operation for erasing thestored data. The memory device 1100 may include a control logic 300 thatcontrols the peripheral circuits 200 under the control of the memorycontroller 1200 of FIG. 1.

The memory cell array 100 may include a plurality of memory blocks MB1to MBk 110, wherein k is a positive integer. Local lines LL and bitlines BL1 to BLn, wherein n is a positive integer, may be coupled to thememory blocks MB1 to MBk 110. For example, the local lines LL mayinclude a first select line, a second select line, and a plurality ofword lines arranged between the first and second select lines. Also, thelocal lines LL may further include dummy lines arranged between thefirst select line and the word lines and between the second select lineand the word lines. Here, the first select line may be a source selectline, and the second select line may be a drain select line. Forexample, the local lines LL may include word lines, drain and sourceselect lines, and source lines SL. For example, the local lines LL mayfurther include dummy lines. For example, the local lines LL may furtherinclude pipe lines. The local lines LL may be coupled to the memoryblocks MB1 to MBk 110, respectively, and the bit lines BL1 to BLn may becommonly coupled to the memory blocks MB1 to MBk 110. The memory blocksMB1 to MBk 110 may be implemented in a two-dimensional orthree-dimensional structure. For example, memory cells may be arrangedin a direction parallel to a substrate in memory blocks 110 having atwo-dimensional structure. For example, memory cells may be arranged ina direction vertical to a substrate in memory blocks 110 having athree-dimensional structure.

The peripheral circuits 200 may be configured to perform program, read,and erase operations of a selected memory block 110 under the control ofthe control logic 300. For example, the peripheral circuits 200, underthe control of the control logic 300, may supply verify and passvoltages to the first select line, the second select line, and the wordlines, selectively discharge the first select line, the second selectline, and the word lines, and verify memory cells coupled to a selectedword line among the word lines. For example, the peripheral circuits 200may include a voltage generating circuit 210, a row decoder 220, a pagebuffer group 230, a column decoder 240, an input/output circuit 250, anda sensing circuit 260.

The voltage generating circuit 210 may generate various operatingvoltages Vop used for program, read, and erase operations in response toan operation signal OP_CMD received from the control logic 300. Also,the voltage generating circuit 210 may selectively discharge the locallines LL in response to the operation signal OP_CMD. For example, thevoltage generating circuit 210 may generate a program voltage, a verifyvoltage, pass voltages, a turn-on voltage, a read voltage, an erasevoltage, a source line voltage, and the like under the control of thecontrol logic 300.

The row decoder 220 may transfer the operating voltages Vop to locallines LL coupled to a selected memory block 110 in response to a rowaddress RADD received from the control logic 300.

The page buffer group 230 may include a plurality of page buffers PB1 toPBn 231 coupled to the bit lines BL1 to BLn. For example, each pagebuffer PB1 to PBn 231 may be coupled to a corresponding bit line amongthe plurality of bit lines BL1 to BLn. The page buffers PB1 to PBn 231may operate in response to page buffer control signals PBSIGNALSreceived from the control logic 300. The page buffers PB1 to PBn 231 maytemporarily store data received through the bit lines BL1 to BLn, orsense voltages or current of the bit lines BL1 to BLn in a read orverify operation.

The column decoder 240 may transfer data between the input/outputcircuit 250 and the page buffer group 230 in response to a columnaddress CADD received from the control logic 300. For example, thecolumn decoder 240 may exchange data with the page buffers 231 throughdata lines DL, or exchange data with the input/output circuit 250through column lines CL.

The input/output circuit 250 may transfer a command CMD and address ADD,which are received from the memory controller (1200 of FIG. 1), to thecontrol logic 300, or exchange data DATA with the column decoder 240.

The sensing circuit 260, in a read operation and a verify operation, maygenerate a reference current in response to a permission bit VRY_BIT<#>,and output a pass signal PASS or a fail signal FAIL by comparing asensing voltage VPB received from the page buffer group 230 with areference voltage generated by the reference current.

The control logic 300 may control the peripheral circuits 200 byoutputting the operation signal OP_CMD, the row address RADD, the pagebuffer control signals PBSIGNALS, and the permission bit VRY_BIT<#> inresponse to the command CMD and the address ADD. Also, the control logic300 may determine whether the verify operation has passed or failed inresponse to the pass or fail signal PASS or FAIL.

FIG. 4 is a diagram illustrating an exemplary configuration of thememory block of FIG. 3.

Referring to FIG. 4, a plurality of word lines arranged in parallel toone another between a first select line and a second select line may becoupled to the first memory block 110. Here, the first select line maybe a source select line SSL, and the second select line may be a drainselect line DSL. More specifically, the first memory block 110 mayinclude a plurality of strings ST coupled between bit lines BL1 to BLnand a source line SL. The bit lines BL1 to BLn may be coupled to thestrings ST, respectively, and the source line SL may be commonly coupledto the strings ST. The strings ST may be configured identically to oneanother, and therefore, a string ST coupled to a first bit line BL1 willbe described in detail as an example.

The string ST may include a source select transistor SST, a plurality ofmemory cells F1 to F16, and a drain select transistor DST, which arecoupled in series to each other between the source line SL and the firstbit line BL1. At least one source select transistor SST and at least onedrain select transistor DST may be included in one string ST. Also, thenumber of memory cells included in one string ST may vary by design andmay be larger than the number of the memory cells F1 to F16 shown inFIG. 4.

A source of the source select transistor SST may be coupled to thesource line SL, and a drain of the drain select transistor DST may becoupled to the first bit line BL1. The memory cells F1 to F16 may becoupled in series between the source select transistor SST and the drainselect transistor DST. Gates of source select transistors SST includedin different strings ST may be coupled to the source select line SSL,gates of drain select transistors DST included in different strings STmay be coupled to the drain select line DSL, gates of the memory cellsF1 to F16 included in different strings ST may be coupled to a pluralityof word lines WL1 to WL16. A group of memory cells coupled to the sameword line among the memory cells included in different strings ST may bea physical page PPG. Therefore, physical pages PPG the number of whichcorresponds to the number of the word lines WL1 to WL16 may be includedin the first memory block 110.

In an embodiment, each memory cell MC may store one bit of data, i.e.,may be a single level cell (SLC). In this case, one physical page PPGmay store one logical page (LPG) data. The one LPG data may include databits the number of which corresponds to the number of cells included inone physical page PPG. In another embodiment, each memory cell MC maystore two or more bits of data, i.e., may be a multi-level cell. In thiscase, one physical page PPG may store two or more LPG data.

FIG. 5 is a diagram illustrating an embodiment of a memory block that isthree-dimensionally configured.

Referring to FIG. 5, the memory cell array 100 may include a pluralityof memory blocks MB1 to MBk 110. The memory block 110 may include aplurality of strings ST11 to ST1 m and ST21 to ST2 m. In an embodiment,each of the plurality of strings ST11 to ST1 m and ST21 to ST2 m may beformed in a ‘U’ shape. In the memory block 110, m strings may bearranged in a row direction (X direction). In FIG. 5, it is illustratedthat two strings are arranged in a column direction (Y direction),However, this is for convenience of description, and three or morestrings may be arranged in the column direction (Y direction).

Each of the plurality of strings ST11 to ST1 m and ST21 to ST2 m mayinclude at least one source select transistor SST, first to nth memorycells MC1 to MCn, a pipe transistor PT, and at least one drain selecttransistor DST.

The source and drain select transistors SST and DST and the memory cellsMC1 to MCn may have structures similar to one another. For example, eachof the source and drain select transistors SST and DST and the memorycells MC1 to MCn may include a channel layer, a tunnel insulating layer,a charge trapping layer, and a blocking insulating layer. For example, apillar for providing the channel layer may be provided in each string.For example, a pillar for providing at least one of the channel layer,the tunnel insulating layer, the charge trapping layer, and the blockinginsulating layer may be provided in each string.

The source select transistor SST of each string may be coupled between asource line SL and memory cells MC1 to MCp.

In an embodiment, source select transistors of strings arranged in thesame row may be coupled to a source select line extending in the rowdirection, and source select transistors of strings arranged indifferent rows may be coupled to different source select lines. In FIG.5, source select transistors of strings ST11 to ST1 m of a first row maybe coupled to a first source select line SSL1. Source select transistorsof strings ST21 to ST2 m of a second row may be coupled to a secondsource select line SSL2.

In another embodiment, the source select transistors of the strings ST11to ST1 m and ST21 to ST2 m may be commonly coupled to one source selectline.

First to nth memory cells MC1 to MCn of each string may be coupledbetween the source select transistor SST and the drain select transistorDST.

The first to nth memory cells MC1 to MCn may be divided into first topth memory cells MC1 to MCp and (p+1)th to nth memory cells MCp+1 toMCn. The first to pth memory cells MC1 to MCp may be sequentiallyarranged in a vertical direction (Z direction), and be coupled in seriesto each other between the source select transistor SST and the pipetransistor PT. The (p+1)th to nth memory cells MCp+1 to MCn may besequentially arranged in the vertical direction (Z direction), and becoupled in series to each other between the pipe transistor PT and thedrain select transistor DST. The first to pth memory cells MC1 to MCpand the (p+1)th to nth memory cells MCp+1 to MCn may be coupled to eachother through the pipe transistor PT. Gates of the first to nth memorycells MC1 to MCn of each string may be coupled to first to nth wordlines WL1 to WLn, respectively.

In an embodiment, at least one of the first to nth memory cells MC1 toMCn may be used as a dummy memory cell. When a dummy memory cell isprovided, the voltage or current of a corresponding string can be stablycontrolled. A gate of the pipe transistor PT of each string may becoupled to a pipe line PL.

The drain select transistor DST of each string may be coupled to a bitline and the memory cells MCp+1 to MCn. Strings arranged in the rowdirection may be coupled to a drain select line extending in the rowdirection. Drain select transistors of the strings ST11 to ST1 m, of thefirst row may be coupled to a first drain select line DSL1. Drain selecttransistors of the strings ST21 to ST2 m of the second row may becoupled to a second drain select line DSL2.

Strings arranged in the column direction may be coupled to bit linesextending in the column direction. In FIG. 5, strings ST11 and ST21 of afirst column may be coupled to a first bit line BL1. Strings ST1 m andST2 m of an mth column may be coupled to an mth bit line BLm.

Memory cells coupled to the same word line among the strings arranged inthe row direction may constitute one page. For example, memory cellscoupled to the first word line WL1 among the strings ST11 to ST1 m ofthe first row may constitute one page. Memory cells coupled to the firstword line WL1 among the strings ST21 to ST2 m of the second row mayconstitute another page. As any one of the drain select lines DSL1 andDSL2 is selected, strings arranged in one row direction may be selected.As any one of the word lines WL1 to WLn is selected, one page among theselected strings may be selected.

FIG. 6 is a diagram illustrating an example of data of a logical pagecomprising a plurality of data sectors.

Referring to FIG. 6, data of one logical page (LPG) or an LPG data maybe configured with a plurality of data sectors. The LPG data may be ECCencoded by the ECC circuit 730 before provided to the memory device1100. The ECC encoding may be performed by providing a parity bit todata and encoding the data together with the parity bit. The ECC encodeddata may be programmed together with the parity bit in a physical pagePPG.

The ECC encoded data programmed together with the parity bit in thephysical page PPG may be read from the memory device 1100 by a readoperation to be output to the memory controller 1200. The ECC encodeddata output from the memory device 1100 to the memory controller 1200may be ECC decoded by the ECC circuit 730 of the memory controller 1200.The ECC decoding may be an operation of correcting an error of the ECCencoded data by using the parity bit included in the ECC encoded data.

One LPG data may be divided into a plurality of data sectors, and eachdata sector may be independently ECC encoded by the ECC circuit 730. Inother words, each data sector may be configured with ECC-encoded dataand a parity bit. That is, the ECC encoding may be performed byproviding a parity bit to each data sector. As an example, one LPG datamay be configured with first to fourth data sectors Sector-1 toSector-4. Each of the data sectors may include user data andcorresponding parity, which are ECC encoded. The first data sectorSector-1 may include first user data Data-1 and a first parity Parity-1added to the first user data Data-1, which are ECC encoded. The seconddata sector Sector-2 may include second user data Data-2 and a secondparity Parity-2 added to the second user data Data-2, which are ECCencoded. The third data sector Sector-3 may include third user dataData-3 and a third parity Parity-3 added to the third user data Data-3,which are ECC encoded. The fourth data sector Sector-4 may includefourth user data Data-4 and a fourth parity Parity-4 added to the fourthuser data Data-4, which are ECC encoded.

The memory device 1100 may read one LPG data when a read command isreceived and store the read LPG data in the page buffer group 230. Also,the memory device 1100 may output the LGP data stored in the page buffergroup 230 in response to a data output command. At this time, only thedata of some data sectors among the data of a plurality of data sectorsincluded in one logical page may be sent to the host 2000. As anexample, when the memory device 1100 outputs first data sector Sector-1,the ECC circuit 730 of the memory controller 1200 may perform ECCdecoding by using the first user data Data-1 and the first parityParity-1. Then, the ECC decoded data sector may be sent to the host2000. In other words, a read operation of the memory device 1100 may beperformed in units of logical pages, and a data output operation of thememory device 1100 may be performed in units of data sectors.

FIG. 7 is a diagram illustrating threshold voltage distributions ofmulti-bit memory cells and a read operation, according to an embodimentof the present disclosure.

Referring to FIG. 7, one memory cell may store 2 or more bits of data.As an example, the memory cell may store 3 bits of data. In this case,one physical page PPG may store three LPG data of first to third pages1st logical page, 2nd logical page, and 3rd logical page. The three LPGdata stored in the first to third logical pages may form eight thresholdvoltage distributions. In other words, the three LPG data stored in thefirst to third logical pages may form an erase threshold voltagedistribution E and first to seventh program threshold voltagedistributions P1 to P7. Each threshold voltage distribution maycorrespond to data of 3 bits. For example, the erase threshold voltagedistribution E may correspond to ‘111,’ and the first program thresholdvoltage distribution P1 may correspond to ‘110.’ At this time, ‘110’ area first logical page data bit, a second logical page data bit, and athird logical page data bit, respectively. The second program thresholdvoltage distribution P2, the third program threshold voltagedistribution P3, the fourth program threshold voltage distribution P4,the fifth program threshold voltage distribution P5, the sixth programthreshold voltage distribution P6, and the seventh program thresholdvoltage distribution P7 may correspond to ‘100,’ ‘000,’ ‘010,’‘011,’‘001,’ and ‘101,’ respectively.

When a read command and a read address corresponding to first LPG dataare received, the memory device 1100 may perform a read operation, usinga third read voltage R3 and a seventh read voltage R7. When a readcommand and a read address corresponding to second LPG data arereceived, the memory device 1100 may perform a read operation, using asecond read voltage R2, a fourth read voltage R4, and a sixth readvoltage R6. When a read command and a read address corresponding tothird LGP data are received, the memory device 1100 may perform a readoperation, using a first read voltage R1 and a fifth read voltage R5.

Data may be randomized by the data randomizer 770 of the memorycontroller 1200 to be programmed in the physical page PPG. When the datais randomized, numbers of memory cells included in the erase thresholdvoltage distribution E and the first to seventh program thresholdvoltage distributions P1 to P7 may be equal to one another or besubstantially equal to one another. As an example, when a read operationis performed using the first read voltage R1, the number of on-cells andthe number of off-cells may be formed at a ratio of 1:7. As anotherexample, when a read operation is performed using the third read voltageR3, the number of on-cells and the number of off-cells may be formed ata ratio of 3:4. For example, when the ratio of the number of on-cells tothe number of off-cells is 3.2:18 as a result obtained by performing theread operation, using the third read voltage R3, i.e., when the numberof on-cells increases with reference to a reference value (i.e., theratio of 3:4), it may be presumed that the threshold voltagedistribution has been entirely moved to the left side. In other words,the optimum third read voltage R3 may be a voltage smaller than theinitially set third read voltage R3. When the threshold voltagedistribution is entirely moved as time elapses after the data isprogrammed, the ratio of the number of on-cells to the number ofoff-cells may not be a reference value (e.g., the ratio of 3:4) when aread operation is performed using the initially set third read voltageR3. In this case, the optimum third read voltage R3 may be set as a readvoltage at which the ratio of the number of on-cells to the number ofoff-cells is exactly or close to the reference value (i.e., the ratio of3:4).

As another example, when a read operation is performed using the sixthread voltage R6, the number of on-cells and the number of off-cells mayform a ratio of 6:2. For example, when the ratio of the number ofon-cells to the number of off-cells is 5.7:2.3 as a result obtained byperforming the read operation using the sixth read voltage R6, it may bepresumed that the threshold voltage distribution has been entirely movedto the right side. In other words, the optimum sixth read voltage R6 maybe a voltage larger than the initially set sixth read voltage R6.

FIG. 8 is a diagram illustrating a method for performing a defense codeoperation, according to an embodiment of the present disclosure.

Referring to FIG. 8, if time elapses after a program operation isperformed, the threshold voltage distribution of memory cells may bewidened as compared with that just after the program operation isperformed. As a result, adjacent threshold voltage distributions mayoverlap with each other as shown in FIG. 8. As a result, when a readoperation is performed using initially set read voltages, i.e., first toseventh read voltages R1 to R7, a plurality of error bits may beincluded in read data. In this case, an ECC operation performed by theECC circuit 730 of the memory controller 1200 may fail.

When the ECC operation performed by the ECC circuit 730 fails, thememory device 1100 may perform a read retry operation, using readvoltages R1′ to R7′ that are changed by a certain offset from theinitially set voltages, i.e., the first to seventh read voltages R1 toR7. As an example, in the case of a second LPG data read operation, thememory device 1100 may first perform the read operation, using thesecond read voltage R2, the fourth read voltage R4, and the sixth readvoltage R6. When an ECC operation performed by the ECC circuit 730 ofthe memory controller 1200 fails with respect to read data read by theread operation performed using the second read voltage R2, the fourthread voltage R4, and the sixth read voltage R6, the memory device 1100may perform a read operation, using a second read voltage R2′, a fourthread voltage R4′, and a sixth read voltage R6′, which are changed by acertain offset. Offset voltages between the second, fourth, and sixthread voltages R2, R4, and R6 and the changed second, fourth, and sixthread voltages R2′, R4′, and R6′ may be different from one another. Also,the offset voltages between the second, fourth, and sixth read voltagesR2, R4, and R6 and the changed second, fourth, and sixth read voltagesR2′, R4′, and R6° may be inputted in the form of digital code values bythe memory controller 1200. When the ECC operation on the read data readby the read operation performed using the first to seventh read voltagesR1 to R7 fails, a read operation using a changed bias condition, whichis subsequently performed, is referred to as a read retry operation.

When an ECC operation on data output by the read retry operationperformed using the changed first to seventh read voltages to R7′ againfails, the memory device 1100 may again change the read voltages R1′ toR7′ and perform a read retry operation, using the changed read voltages,i.e., first to seventh read voltages R1″ to R7″.

As another example, in the case of the second LPG data read operation,the memory device 1100 may first perform the read operation, using thesecond read voltage R2, the fourth read voltage R4, and the sixth readvoltage R6. When an ECC operation performed by the ECC circuit 730 ofthe memory controller 1200 fails with respect to read data read by theread operation performed using the second read voltage R2, the fourthread voltage R4, and the sixth read voltage R6, the memory system 1000may start an optimum read voltage search operation. If data israndomized to be programmed in memory cells as described with referenceto FIG. 7, an optimum second read voltage may be a read voltage at whichthe ratio of the number of on-cells to the number of off-cells is thereference value (i.e., the ratio of 2:6). The memory system 1000 mayperform the optimum read voltage search operation by using such afeature. In other words, when a read voltage at which the ratio of thenumber of on-cells to the number of off-cells is the reference value(e.g., the ratio of 2:6) is searched while gradually changing the secondread voltage R2, the searched read voltage may be set as the optimumsecond read voltage. An optimum fourth read voltage may be searched byperforming the same operation as the second read voltage on the fourthread voltage R4. In other words, a read voltage at which the ratio ofthe number of on-cells to the number of off-cells is the reference value(i.e., the ratio of 4:4) may be set as the optimum fourth read voltage.In addition, an optimum sixth read voltage may be searched by performingthe same operation as the second read voltage on the sixth read voltageR4. In other words, a read voltage at which the ratio of the number ofon-cells to the number of off-cells is the reference value (i.e., theratio of 6:2) may be set as the optimum sixth read voltage. The secondLPG data read retry operation may be performed using the optimum secondread voltage, the optimum fourth read voltage, and the optimum sixthread voltage, which are set in this manner. The above-described optimumread voltage search operation and the read retry operation performedusing the searched optimum read voltages are referred to as a defensecode operation.

As described above, the defense code operation may require a pluralityof read operations. As a result, much time may be taken, which resultsin an increase in read latency. Accordingly, there is required a methodfor performing a defense code operation, which can decrease the numberof times of read operations. As an example, when the ratio of the numberof on-cells to the number of off-cells is 3:5 as a reference valueobtained by performing a read operation using the initially set secondread voltage and the ratio of the number of on-cells to the number ofoff-cells is 2.5:4.5 as a result obtained by performing a read operationusing the second read voltage changed by a certain offset in the searchof the optimum second read voltage, the optimum second read voltage canbe immediately predicted from a difference between the two voltages,i.e., an offset and a change in ratio of the number of on-cells to thenumber of off-cells between the two operations. In other words, thenumber of times of read operations for searching for the optimum readvoltage can be decreased by deriving the optimum read voltage from adifference in read voltages between two read operations and a change inthe number of memory cells, i.e., an inclination.

When an ECC operation on the second LPG data succeeds as theabove-described defense code operation is performed, a result of thedefense code operation on the second LPG data read operation may be usedin a first LPG data read retry operation or third LPG data read retryoperation of the same physical page. As an example, a read voltage inthe first LPG data read retry operation may be determined based on theoptimum second read voltage, the optimum fourth read voltage, or theoptimum sixth read voltage, which is searched in the defense codeoperation on the second LPG data read operation. A first LPG data readoperation may be performed using the third read voltage R3, and theseventh read voltage R7. At this time, a difference between the optimumthird read voltage and the initially set third voltage read may besimilar to a difference between the optimum second read voltage and theinitially set second read voltage, a difference between the optimumfourth read voltage and the initially set fourth read voltage, or adifference between the optimum sixth read voltage and the initially setsixth read voltage. Thus, the defense code operation performed on thesecond LPG data read operation, e.g., a result obtained by searching forthe optimum second read voltage, the optimum fourth read voltage, or theoptimum sixth read voltage can be used to search for the optimum thirdread voltage or the optimum seventh read voltage. As a result, it ispossible to decrease the time required to search for the optimum thirdread voltage or the optimum seventh read voltage.

When the ECC operation on the second LPG data programmed in a firstphysical page succeeds as the above-described defense code operation isperformed, a result of the defense code operation on a second LPG dataread operation of the first physical page may be used in first to thirdLPG data read operations of a second physical page different from thefirst physical page. In this case, the first physical page and thesecond physical page may be included in the same memory block 110. Datastored in a plurality of physical pages included in one memory block 110may experience read disturbs similar to one another. As a result,movements of threshold voltage distributions of data stored in aplurality of physical pages included in one memory block 110 may besimilar to one another. Thus, when the ECC operation on the second LPGdata programmed in the first physical page succeeds as theabove-described defense code operation is performed, the optimum readvoltages used in the first to third LPG data read operations of thesecond physical page can be rapidly searched when a result of thedefense code operation on the second LPG data read operation of thefirst physical page is used in the first to third LPG data readoperations of the second physical page different from the first physicalpage.

As another example, when the ECC operation on first data sector in thesecond LPG data succeeds as the above-described defense code operationis performed, a result of the defense code operation on a first datasector read operation may be used in another data sector read operationor defense code operation on another data sector in the same LPG data,i.e., the second LPG data. For example, the optimum second read voltage,the optimum fourth read voltage, or the optimum sixth read voltage,which is searched in the defense code operation on the first data sectorof the second LPG data may be used in the second data sector readoperation or read retry operation on the second data sector in thesecond LPG data. As a result, the time required to perform the defensecode operation on the second data sector is decreased, so that it ispossible to decrease read latency.

FIG. 9 is a diagram illustrating a method for performing a defense codeoperation, according to another embodiment of the present disclosure.

Referring to FIG. 9, an assist read operation may be performed torapidly search for the optimum read voltage during the defense codeoperation. For example, a first assist read operation Assist read-1using the third read voltage R3 and a second assist read operationAssist read-2 using the fifth read voltage R5 may be performed when asecond LPG data read operation is performed using the second readvoltage R2, the fourth read voltage R4, and the sixth read voltage R6.The operation of searching for the optimum read voltage can be morerapidly performed through such assist read operations.

As an example, when the ECC operation of the second LPG data readoperation using the second, fourth and sixth read voltages R2, R4, andR6 fails, the defense code operation may be performed to the second LPGdata by using a read operation using changed second, fourth and sixthread voltages R2′, R4′, and R6′ and two-time assist read operationsusing the third and fifth read voltages R3 and R5. When the readoperation is performed to the second LPG data using the changed second,fourth and sixth read voltages R2′, R4′, and R6′, data of one bit suchas ‘1’ or ‘0’ may be extracted per each memory cell. Referring to FIG.7, when the data of one bit, which is read from a memory cell in thesecond LPG data, is ‘1’ as the read operation is performed to the secondLPG data using the changed second, fourth and sixth read voltages R2′,R4′, and R6′, the memory cell may be included in any one between theerase threshold voltage distribution E and the first program thresholdvoltage distribution P1 or any one between the fourth program thresholdvoltage distribution P4 and the fifth program threshold voltagedistribution P5. At this time, in the case of a memory cell of thesecond LPG data determined as an on-cell as a result of the first assistread operation Assist read-1 with the third read voltage R3, thecorresponding memory cell may be determined as a memory cell included inthe erase threshold voltage distribution E or the first programthreshold voltage distribution P1. On the contrary, in the case of amemory cell of the second LPG data determined as an off-cell as a resultof the first assist read operation Assist read-1 with the third readvoltage R3, the corresponding memory cell may be determined as a memorycell included in the fourth program threshold voltage distribution P4 orthe fifth program threshold voltage distribution P5. In other words, thememory cell that has data of ‘1° as the result of the read operationperformed to the second LPG data using the changed second, fourth andsixth read voltages R2’, R4′, and R6′ and is determined as an on-cell asa result of the first assist read operation Assist read-1 with the thirdread voltage R3 may be determined as a memory cell included in the erasethreshold voltage distribution E or the first program threshold voltagedistribution P1. In this case, a second read voltage at which the ratioof the number of memory cells, each of which has data of ‘1’ as theresult of the read operation performed to the second LPG data using thechanged second, fourth and sixth read voltages R2′, R4′, and R6′ and isdetermined as an on-cell as a result of the first assist read operationAssist read-1 with the third read voltage R3, to the number of the othermemory cells is the reference value (i.e., the ratio of 2:6) may be setas the optimum second read voltage. When the ratio of the number ofmemory cells, each of which has data of ‘1’ as the result of the readoperation performed to the second LPG data using the changed second,fourth and sixth read voltages R2′, R4′, and R6′ and is determined as anon-cell as a result of the first assist read operation Assist read-1with the third read voltage R3, to the number of the other memory cellsis 2.2:5.8, the optimum second read voltage may be a voltage smallerthan the changed second read voltage R2′.

As an example, when the data of one bit, which is read from a memorycell in the second LPG data, is ‘1’ as the second LPG data readoperation is performed using the changed second, fourth and sixth readvoltages R2′, R4′, and R6′, the memory cell may be included in any onebetween the erase threshold voltage distribution E and the first programthreshold voltage distribution P1 or any one between the fourth programthreshold voltage distribution P4 and the fifth program thresholdvoltage distribution P5. At this time, in the case of a memory cell ofthe second LPG data determined as an off-cell as a result of the firstassist read operation Assist read-1 with the third read voltage R3, thecorresponding memory cell may be determined as a memory cell included inthe fourth program threshold voltage distribution P4 or the fifthprogram threshold voltage distribution P5. In other words, a fourth readvoltage at which the ratio of the number of memory cells, each of whichhas data of ‘1’ as the result of the read operation performed to thesecond LPG data using the changed second, fourth and sixth read voltagesR2′, R4′, and R6′ and is determined as an off-cell as a result of thefirst assist read operation Assist read-1 with the third read voltageR3, to the number of the other memory cells is the reference value(i.e., the ratio of 2:6) may be set as the optimum fourth read voltage.

As an example, when the data of one bit, which is read from a memorycell in the second LPG data, is ‘0’ as the second LPG data readoperation is performed using the changed second, fourth and sixth readvoltages R2′, R4′, and R6′, the memory cell may be included in any onebetween the second program threshold voltage distribution P2 and thethird program threshold voltage distribution P3 or any one between thesixth program threshold voltage distribution P6 and the seventh programthreshold voltage distribution P7. At this time, in the case of a memorycell of the second LPG data determined as an on-cell as a result of thesecond assist read operation Assist read-2 with the fifth read voltageR5, the corresponding memory cell may be determined as a memory cellincluded in the second program threshold voltage distribution P2 or thethird program threshold voltage distribution P3. On the contrary, in thecase of a memory cell of the second LPG data determined as an off-cellas a result of the second assist read operation Assist read-2 with thefifth read voltage R5, the corresponding memory cell may be determinedas a memory cell included in the sixth program threshold voltagedistribution P6 or the seventh program threshold voltage distributionP7. In other words, the memory cell that has data of ‘0’ as the resultof the read operation performed to the second LPG data using the changedsecond, fourth and sixth read voltages R2′, R4′, and R6′ and isdetermined as an off-cell as a result of the second assist readoperation Assist read-2 with the fifth read voltage R5 may be determinedas a memory cell included in the sixth program threshold voltagedistribution P6 or the seventh program threshold voltage distributionP7. In other words, a fourth read voltage at which the ratio of thenumber of memory cells, each of which has data of ‘0’ as the result ofthe read operation performed to the second LPG data using the changedsecond, fourth and sixth read voltages R2′, R4′, and R6′ and isdetermined as an off-cell as a result of the second assist readoperation Assist read-2 with the fifth read voltage R5, to the number ofthe other memory cells is the reference value (i.e., the ratio of 2:6)may be set as the optimum fourth read voltage. When the ratio of thenumber of memory cells, each of which has data of ‘0’ as the result ofthe read operation performed to the second LPG data using the changedsecond, fourth and sixth read voltages R2′, R4′, and R6′ and isdetermined as an off-cell as a result of the second assist readoperation Assist read-2 with the fifth read voltage R5, to the number ofthe other memory cells is 2.2:5.8, the optimum sixth read voltage may bea voltage larger than the changed sixth read voltage R6′.

When the first and second assist read operations Assist read-1 andAssist read-2 are used as described above, it is unnecessary toindividually perform operations of searching for the optimum second readvoltage, the optimum fourth read voltage, and the optimum sixth readvoltage. That is, data of one bit from each memory cell is read fromeach memory cell by performing the read operation once, using the secondread voltage, the fourth read voltage, and the sixth read voltage, andthe read data is compared with results of the first and second assistread operation, thereby searching for the optimum second read voltage,the optimum fourth read voltage, and the optimum sixth read voltage.

As another example, in a first LPG data read operation performed usingthe third read voltage and the seventh read voltage, the fifth readvoltage R5 may be used in the assist read operation. Also, in a thirdLPG data read operation performed using the first read voltage and thefifth read voltage, the third read voltage R3 may be used in the assistread operation.

The optimum read voltage searched through the above-described operationmay be used in another data sector read operation of the same logicalpage, another LPG read operation of the same physical page, or a readoperation of logical pages programmed in another physical page of thesame memory block. However, the use of the optimum read voltage is notnecessarily limited to the above-described examples, and may be morevariously applied.

FIG. 10 is a diagram illustrating a method for performing a defense codeoperation between a plurality of tags, according to an embodiment of thepresent disclosure.

The memory controller 1200 may queue a plurality of commands receivedfrom the host 2000. Each of the plurality of commands queued by thememory controller 1200 is referred to as a tag. Each of the tags queuedby the memory controller 1200 may correspond to a program operation, anerase operation, or a read operation. In addition, the tags queued bythe memory controller 1200 may be sequentially transferred to the memorydevice 1100 to be performed. Before an operation on a tag first inputtedto the memory device 1100 is completed, a next tag may be inputted. Inaddition, the tags queued by the memory controller 1200 may betransferred to the memory device 1100 in a sequence different from thequeuing sequence to be performed. In other words, the memory controller1200 may vary the sequence in which the queued tags are processed, usingmethods including order of priority, and the like.

Referring to FIG. 10, the memory device 1100 may first receive Tag-ARead command inputted from the memory controller 1200 and then perform aTag-A read operation in response to the Tag-A Read command. After theTag-A Read operation is completed, Tag-A data read through the Tag-ARead operation may be output (denoted as “Tag-A Data-out” in FIG. 10).The ECC circuit 730 of the memory controller 1200 may perform a Tag-AECC operation on the Tag-A data. The Tag-A ECC operation on the Tag-Adata may fail (denoted as “Tag-A Fail” in FIG. 10). While the ECCcircuit 730 of the memory controller 1200 is performing the Tag-A ECCoperation on the Tag-A data after the memory device 1100 outputs theTag-A data (“Tag-A Data-out”), the memory controller 1200 may inputTag-B Read command to the memory device 1100, and perform a readoperation in response to the Tag-B Read command. After Tag-B Readoperation is completed, the memory device 1100 may output Tag-B data(denoted as “Tag-B Data-out” in FIG. 10) read through the Tag-B Readoperation. The ECC circuit 730 of the memory controller 1200 may performa Tag-B ECC operation on the Tag-B data. At this time, the Tag-B ECCoperation on the Tag-B data may fail (denoted as “Tag-B Fail” in FIG.10).

While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-B ECC operation on the Tag-B data after the memory device 1100outputs the Tag-B data (“Tag-B Data-out”), the memory controller 1200may input Tag-C Read command to the memory device 1100, and perform aread operation in response to the Tag-C read command. After Tag-C Readoperation is completed, the memory device 1100 may output the Tag-C data(denoted as “Tag-C Data-out” in FIG. 10) read through the Tag-C Readoperation. The ECC circuit 730 of the memory controller 1200 may performa Tag-C ECC operation on the Tag-C data. At this time, the Tag-C ECCoperation on the Tag-C data may fail (denoted as “Tag-C Fail” in FIG.10).

While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-C ECC operation on the Tag-C data after the memory device 1100outputs the Tag-C data, the memory controller 1200 may input Tag-A firstread retry command Tag-A Retry1 to the memory device 1100, and thememory device 1100 may perform a read retry operation corresponding tothe Tag-A read operation in response to the Tag-A first read retrycommand Tag-A Retry1, i.e., a defense code operation corresponding tothe Tag-A read operation. In other words, the memory device 1100 entersinto a defense code operation corresponding to the Tag-A read operation.Tag-A first read retry operation Tag-A Retry1 may be performed in avoltage condition different from that of the Tag-A read operation. Inother words, the Tag-A first read retry operation Tag-A Retry1 may beperformed using a new read voltage or an operation of searching for anoptimum read voltage and a read retry operation using the optimum readvoltage, i.e., a defense code operation, which are described withreference to FIG. 9.

After the Tag-A first read retry operation Tag-A Retry1 is completed,the Tag-A data output through the Tag-A first read retry operation Tag-ARetry1 may be output (denoted as “Tag-A Data-out” in FIG. 10). The ECCcircuit 730 of the memory controller 1200 may perform a Tag-A ECCoperation on the Tag-A data. The Tag-A ECC operation on the Tag-A datamay fail (denoted as “Tag-A Fail” in FIG. 10).

While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-A ECC operation on the Tag-A data after the memory device 1100outputs the Tag-A data (“Tag-A Data-out”), the memory controller 1200may provide Tag-B first read retry command Tag-B Retry1 to the memorydevice 1100, and the memory device 1100 may perform a read retryoperation corresponding to the Tag-B first read retry command Tag-BRetry1, i.e., a defense code operation corresponding to the Tag-B readoperation. In other words, the memory device 1100 enters into a defensecode operation corresponding to the Tag-B read operation. A Tag-B firstread retry operation Tag-B Retry1 may be performed in a voltagecondition different from that of the Tag-B read operation. In otherwords, the Tag-B first read retry operation Tag-B Retry1 may beperformed using a new read voltage or an operation of searching for anoptimum read voltage and a read retry operation using the optimum readvoltage, i.e., a defense code operation, which are described withreference to FIG. 9.

After the Tag-B first read retry operation Tag-B Retry1 is completed,the Tag-B data read through the Tag-B first read retry operation Tag-BRetry1 may be output (denoted as “Tag-B Data-out” in FIG. 10). The ECCcircuit 730 of the memory controller 1200 may perform a Tag-B ECCoperation on the Tag-B data. At this time, the Tag-B ECC operation onthe Tag-B data may pass (denoted as “Tag-B Pass” in FIG. 10).

While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-B ECC operation on the Tag-B data after the memory device 1100outputs the Tag-B data (“Tag-B Data-out”), the memory controller 1200may input a Tag-C first read retry command Tag-C Retry1 to the memorydevice 1100, and the memory device 1100 may perform a read retryoperation corresponding to the Tag-C first read retry command Tag-CRetry1, i.e., a defense code operation corresponding to the Tag-C readoperation. In other words, the memory device 1100 enters into a defensecode operation corresponding to the Tag-C read operation. A Tag-C firstread retry operation Tag-C Retry1 may be performed in a voltagecondition that is different from that of the Tag-C read operation. Inother words, the Tag-C first read retry operation Tag-C Retry1 may beperformed using a new read voltage or an operation of searching for anoptimum read voltage and a read retry operation using the optimum readvoltage, i.e., a defense code operation, which are described withreference to FIG. 9.

After the Tag-C first read retry operation Tag-C Retry1 is completed,the Tag-C data read through the Tag-C first read retry operation Tag-CRetry1 may be output (denoted as “Tag-C Data-out” in FIG. 10). The ECCcircuit 730 of the memory controller 1200 may perform a Tag-C ECCoperation on the Tag-C data. The Tag-C ECC operation on the Tag-C datamay fail (denoted as “Tag-C Fail” in FIG. 10).

While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-C ECC operation on the Tag-C data after the memory device 1100outputs the Tag-C data (“Tag-C Data-out”), the memory controller 1200may input a Tag-A second read retry command Tag-A Retry2 to the memorydevice 1100, and the memory device 1100 may perform a read retryoperation corresponding to the Tag-A second read retry command Tag-ARetry2, i.e., a defense code operation corresponding to the Tag-A readoperation. A Tag-A second read retry operation Tag-A Retry2 may beperformed in a voltage condition different from that of the Tag-A firstread retry operation Tag-A Retry1.

After the Tag-A second read retry operation Tag-A Retry2 is completed,the memory device 1100 output the Tag-A data (“Tag-A Data-out”) readthrough the Tag-A second read retry operation Tag-A Retry2. The ECCcircuit 730 of the memory controller 1200 may perform a Tag-A ECCoperation on the Tag-A data. At this time, the Tag-A ECC operation onthe Tag-A data may fail (“Tag-A Fail”).

While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-A ECC operation on the Tag-A data after the memory device 1100outputs the Tag-C data (“Tag-C Data-out”), the memory controller 1200may input Tag-D Read command to the memory device 1100, and perform aread operation corresponding to the Tag-D Read command. Tag-D Readoperation nr ay be performed using an initially set read voltage. Asanother example, the Tag-D Read operation may be performed using aresult of a defense code operation corresponding to the Tag-B readoperation, Tag B data of which passes the Tag-B ECC operation. In otherwords, the Tag-D Read operation may be performed using a read voltagechanged based on a newly set read voltage as the result of the defensecode operation corresponding to the Tag-B read operation. The detailedoperation is the same as described with reference to FIG. 9. After readoperations in response to Tag-A to Tag-C are started, the memorycontroller 1200 may receive a command of Tag-D from the host 2000 to bequeued.

The Tag-D data read through the Tag-D Read operation performed based onthe newly set read voltage as the result of the defense code operationcorresponding to the Tag-B read operation may be output from the memorydevice 1100 to the memory controller 1200 (denoted as “Tag-D Data-out”in FIG. 10). The ECC circuit 730 of the memory controller 1200 mayperform a Tag-D ECC operation on the Tag-D data. As a result, the Tag-DECC operation on the Tag-D data may pass (denoted as “Tag-D Pass” inFIG. 10).

Then, a Tag-C second read retry operation Tag-C Retry2, Tag-C dataoutput (denoted as “Tag-C Data-out” in FIG. 10), and a Tag-C ECCoperation may be performed. As a result, the Tag-C ECC operation maypass (denoted as “Tag-C Pass” in FIG. 10). The Tag-C second read retryoperation Tag-C Retry2 may be performed in a voltage condition differentfrom that of the Tag-C first read retry operation Tag-C Retry1. In otherwords, the Tag-C second read retry operation Tag-C Retry2 may beperformed using a more optimum read voltage as compared with the Tag-Cfirst read retry operation Tag-C Retry1.

In addition, a Tag-A third read retry operation Tag-A Retry3, Tag-A dataoutput (denoted as “Tag-A Data-out” in FIG. 10), and a Tag-A ECCoperation may be performed. As a result, the Tag-A ECC operation maypass (denoted as “Tag-A Pass” in FIG. 10). The Tag-A third read retryoperation Tag-A Retry3 may be performed in a voltage condition differentfrom that of the Tag-A second read retry operation Tag-A Retry2. Inother words, the Tag-A third read retry operation Tag-A Retry3 may beperformed using a more optimum read voltage as compared with the Tag-Asecond read retry operation Tag-A Retry2.

The Tag-A Read operation or read retry operation, the Tag-B Readoperation or read retry operation, the Tag-C Read operation or readretry operation, or the Tag-D Read operation or read retry operation maybe an operation for reading different LPG data of the same physicalpage. As another example, the Tag-A Read operation or read retryoperation, the Tag-B Read operation or read retry operation, the Tag-CRead operation or read retry operation, or the Tag-D Read operation orread retry operation may be an operation for reading LPG data ofdifferent physical pages included in the same memory block 110. As stillanother example, the Tag-A Read operation or read retry operation, theTag-B Read operation or read retry operation, the Tag-C Read operationor read retry operation, or the Tag-D Read operation or read retryoperation may be an operation for reading different data sector of thesame logical page.

FIG. 11 is a diagram illustrating a method for performing a defense codeoperation between a plurality of tags, according to another embodimentof the present disclosure.

Referring to FIG. 11, the memory device 1100 may first receive Tag-ARead command from the memory controller 1200 and then perform a Tag-ARead operation in response to the Tag-A Read command. After the Tag-ARead operation is completed, Tag-A data read through the Tag-A Readoperation may be output (“Tag-A Data-out”). The ECC circuit 730 of thememory controller 1200 may perform a Tag-A ECC operation on the Tag-Adata. The Tag-A ECC operation on the Tag-A data may fail (“Tag-A Fail”).While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-A ECC operation on the Tag-A data after the memory device 1100outputs the Tag-A data (“Tag-A Data-out”), the memory controller 1200may input a Tag-B Read command to the memory device 1100, and perform aTag-B Read operation corresponding to the Tag-B Read command. After theTag-B Read operation is completed, the memory device 1100 may outputTag-B data (“Tag-B Data-out”) read through the Tag-B Read operation. TheECC circuit 730 of the memory controller 1200 may perform a Tag-B ECCoperation on the Tag-B data. At this time, the Tag-B ECC operation onthe Tag-B data may fail (“Tag-B Fail”).

While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-B ECC operation on the Tag-B data after the memory device 1100outputs the Tag-B data (“Tag-B Data-out”), the memory controller 1200may input Tag-C Read command to the memory device 1100, and perform aTag-C Read operation corresponding to the Tag-C read command. After theTag-C Read operation is completed, the memory device 1100 may output theTag-C data (“Tag-C Data-out”) read through the Tag-C Read operation. TheECC circuit 730 of the memory controller 1200 may perform a Tag-C ECCoperation on the Tag-C data. At this time, the Tag-C ECC operation onthe Tag-C data may fail (“Tag-C Fail”).

While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-C ECC operation on the Tag-C data after the memory device 1100outputs the Tag-C data, the memory controller 1200 may input Tag-A firstread retry command Tag-A Retry1 to the memory device 1100, and thememory device 1100 may perform a Tag-A read retry operation in responseto the Tag-A first read retry command Tag-A Retry1, i.e., a defense codeoperation. In other words, the memory device 1100 enters into a defensecode operation corresponding to the Tag-A read operation. A Tag-A firstread retry operation Tag-A Retry1 may be performed in a voltagecondition different from that of the Tag-A read operation. In otherwords, the Tag-A first read retry operation Tag-A Retry1 may beperformed using a new read voltage or an operation of searching for anoptimum read voltage and a read retry operation using the optimum readvoltage, i.e., a defense code operation, which are described withreference to FIG. 9.

After the Tag-A first read retry operation Tag-A Retry1 is completed,the Tag-A data output through the Tag-A first read retry operation Tag-ARetry1 may be output (“Tag-A Data-out”). The ECC circuit 730 of thememory controller 1200 may perform a Tag-A ECC operation on the Tag-Adata. The Tag-A ECC operation on the Tag-A data may fail (“Tag-A Fail”).While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-A ECC operation on the Tag-A data after the memory device 1100outputs the Tag-A data (“Tag-A Data-out”), the memory controller 1200may provide Tag-B first read retry command Tag-B Retry1 to the memorydevice 1100, and the memory device 1100 may perform a read retryoperation corresponding to the Tag-B first read retry command Tag-BRetry1, i.e., a defense code operation. In other words, the memorydevice 1100 enters into a defense code operation corresponding to theTag-B read operation. A Tag-B first read retry operation Tag-B Retry1may be performed in a voltage condition different from that of the Tag-Bread operation. In other words, the Tag-B first read retry operationTag-B Retry1 may be performed using a new read voltage or an operationof searching for an optimum read voltage and a read retry operationusing the optimum read voltage, i.e., a defense code operation, whichare described with reference to FIG. 9.

After the Tag-B first read retry operation Tag-B Retry1 is completed,the Tag-B data read through the Tag-B first read retry operation Tag-BRetry1 may be output (“Tag-B Data-out”). The ECC circuit 730 of thememory controller 1200 may perform a Tag-B ECC operation on the Tag-Bdata. At this time, the Tag-B ECC operation on the Tag-B data may pass(“Tag-B Pass”).

While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-B ECC operation on the Tag-B data after the memory device 1100outputs the Tag-B data (“Tag-B Data-out”), the memory controller 1200may input a Tag-C first read retry command Tag-C Retry1 to the memorydevice 1100, and the memory device 1100 may perform a read retryoperation corresponding to the Tag-C first read retry command Tag-CRetry1, i.e, a defense code operation. In other words, the memory device1100 enters into a defense code operation corresponding to the Tag-Cread operation. At this time, Tag-C first read retry operation Tag-CRetry1 may use the result of the defense code operation in the Tag-Bfirst read retry operation Tag-B Retry1 that was previously performed.In other words, the Tag-C first read retry operation Tag-C Retry1 may beperformed using a read voltage changed based on information on a readvoltage close to the more optimum read voltage searched as the result ofthe defense code operation in the Tag-B first read retry operation Tag-BRetry1 that was previously performed. As a result, the Tag-C ECCoperation to the Tag-C data read to be output (“Tag-C Data-out”) throughthe Tag-C first read retry operation Tag-C Retry1 may immediately pass(“Tag-C Pass”).

Unlike the embodiment described with reference to FIG. 10, in theembodiment described with reference to FIG. 11, information on a readvoltage searched as a result of the defense code operation correspondingto a first tag read operation can be applied to a defense code operationcorresponding to a second tag read operation that has been alreadyentered into. In other words, unlike the embodiment described withreference to FIG. 10, even when the defense code operation correspondingto the second tag read operation has already entered at a point of timewhen the ECC operation passes in a read retry operation, according tothe result of the defense code operation corresponding to the first tagread operation, the result of the defense code operation correspondingto the first tag read operation can be used in a read retry operation inthe second tag read operation. As a result, it is possible to decreaseread latency.

Similarly, a Tag-A second read retry operation Tag-A Retry2 may also usethe result of the defense code operation in the Tag-B first read retryoperation Tag-B Retry1 that has already been performed. In other words,the Tag-A second read retry operation Tag-A Retry2 may be performedusing a read voltage changed based on information on a read voltageclose to the more optimum read voltage searched as the result of thedefense code operation in the Tag-B first read retry operation Tag-BRetry1 that was previously performed. As a result, the Tag-A ECCoperation to data output (“Tag-A Data-out”) according to the Tag-Asecond read retry operation Tag-A Retry2 may immediately pass (“Tag-APass”).

FIG. 12 is a diagram illustrating a method for performing a defense codeoperation between a plurality of tags, according to another embodimentof the present disclosure.

Referring to FIG. 12, the memory device 1100 may first receive Tag-ARead command from the memory controller 1200 and then perform a Tag-ARead operation in response to the Tag-A Read command. After the Tag-ARead operation is completed, Tag-A data read through the Tag-A Readoperation may be output (“Tag-A Data-out”). The ECC circuit 730 of thememory controller 1200 may perform a Tag-A ECC operation on the Tag-Adata. The Tag-A ECC operation on the Tag-A data may fail (“Tag-A Fail”).While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-A ECC operation on the Tag-A data after the memory device 1100outputs the Tag-A data (“Tag-A Data-out”), the memory controller 1200may input a Tag-B Read command to the memory device 1100, and perform aTag-B Read operation corresponding to the Tag-B Read command. After theTag-B Read operation is completed, the memory device 1100 may outputTag-B data (“Tag-B Data-out”) read through the Tag-B Read operation. TheECC circuit 730 of the memory controller 1200 may perform a Tag-B ECCoperation on the Tag-B data. At this time, the Tag-B ECC operation onthe Tag-B data may fail (“Tag-B Fail”).

While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-B ECC operation on the Tag-B data after the memory device 1100outputs the Tag-B data (“Tag-B Data-out”), the memory controller 1200may input Tag-C Read command to the memory device 1100, and perform aTag-C Read operation corresponding to the Tag-C read command. After theTag-C Read operation is completed, the memory device 1100 may output theTag-C data (“Tag-C Data-out”) read through the Tag-C Read operation. TheECC circuit 730 of the memory controller 1200 may perform a Tag-C ECCoperation on the Tag-C data. At this time, the Tag-C ECC operation onthe Tag-C data may fail (“Tag-C Fail”).

While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-C ECC operation on the Tag-C data after the memory device 1100outputs the Tag-C data, the memory controller 1200 may input Tag-A firstread retry command Tag-A Retry1 to the memory device 1100, and thememory device 1100 may perform a read retry operation corresponding tothe Tag-A first read retry command Tag-A Retry1, i.e., a defense codeoperation. In other words, the memory device 1100 enters into a defensecode operation corresponding to the Tag-A read operation. A Tag-A firstread retry operation Tag-A Retry1 may be performed in a voltagecondition different from that of the Tag-A read operation. In otherwords, the Tag-A first read retry operation Tag-A Retry1 may beperformed using a new read voltage or an operation of searching for anoptimum read voltage and a read retry operation using the optimum readvoltage, i.e., a defense code operation, which are described withreference to FIG. 9.

After the Tag-A first read retry operation Tag-A Retry1 is completed,the Tag-A data output through the Tag-A first read retry operation Tag-ARetry may be output (“Tag-A Data-out”). The ECC circuit 730 of thememory controller 1200 may perform a Tag-A ECC operation on the Tag-Adata. The Tag-A ECC operation on the Tag-A data may fail (“Tag-A Fail”).While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-A ECC operation on the Tag-A data after the memory device 1100outputs the Tag-A data (“Tag-A Data-out”), the memory controller 1200may provide Tag-B first read retry command Tag-B Retry1 to the memorydevice 1100, and the memory device 1100 may perform a read retryoperation corresponding to the Tag-B first read retry command Tag-BRetry1, i.e., a defense code operation. In other words, the memorydevice 1100 enters into a defense code operation corresponding to theTag-B read operation. A Tag-B first read retry operation Tag-B Retry1may be performed in a voltage condition different from that of the Tag-Bread operation. In other words, the Tag-B first read retry operationTag-B Retry1 may be performed using a new read voltage or an operationof searching for an optimum read voltage and a read retry operationusing the optimum read voltage, i.e., a defense code operation, whichare described with reference to FIG. 9.

After the Tag-B first read retry operation Tag-B Retry1 is completed,the Tag-B data read through the Tag-B first read retry operation Tag-BRetry1 may be output (“Tag-B Data-out”). The ECC circuit 730 of thememory controller 1200 may perform a Tag-B ECC operation on the Tag-Bdata. At this time, the Tag-B ECC operation on the Tag-B data may pass(“Tag-B Pass”).

While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-B ECC operation on the Tag-B data after the memory device 1100outputs the Tag-B data (“Tag-B Data-out”), the memory controller 1200may input a Tag-C first read retry command Tag-C Retry1 to the memorydevice 1100, and the memory device 1100 may perform a read retryoperation corresponding to the Tag-C first read retry command Tag-CRetry1, i.e., a defense code operation. In other words, the memorydevice 1100 enters into a defense code operation for the Tag-C readoperation. A Tag-C first read retry operation Tag-C Retry1 may startbefore the Tag-B ECC operation on the Tag-B data is completed. As aresult, in the Tag-C first read retry operation Tag-C Retry1, the memorydevice 1100 does not use the result of the defense code operation in theTag-B first read retry operation Tag-B Retry1, and may independentlyperform a defense code operation. The Tag-C data read through the Tag-Cfirst read retry operation Tag-C Retry1 may be output (“Tag-CData-out”), and a Tag-C ECC operation may be performed on the outputTag-C data. The Tag-C ECC operation on the Tag-C data may fail (“Tag-CFail”).

While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-C ECC operation on the Tag-C data after the memory device 1100outputs the Tag-C data (“Tag-C Data-out”), the memory controller 1200may input a Tag-A second read retry command Tag-A Retry2 to the memorydevice 1100, and the memory device 1100 may perform a read retryoperation corresponding to the Tag-A second read retry command Tag-ARetry2. At this time, the Tag-A second read retry operation Tag-A Retry2may use the result of the defense code operation in the Tag-B first readretry operation Tag-B Retry1 that was previously performed. In otherwords, the Tag-A second read retry operation Tag-A Retry2 may beperformed using a read voltage changed based on information on a readvoltage close to the more optimum read voltage searched as the result ofthe defense code operation in the Tag-B first read retry operation Tag-BRetry1 that was previously performed. As a result, the Tag-A ECCoperation to the Tag-A data output (“Tag-A Data-out”) through the Tag-Asecond read retry operation Tag-A Retry2 may immediately pass (“Tag-APass”).

While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-A ECC operation on the Tag-A data after the memory device 1100outputs the Tag-A data (“Tag-A Data-out”), the memory controller 1200may input a Tag-C second read retry command Tag-C Retry2 to the memorydevice 1100, and the memory device 1100 may perform a read retryoperation in response to the Tag-C second read retry command Tag-CRetry2. At this time, the Tag-C second read retry operation Tag-C Retry2may use the result of the defense code operation in the Tag-B first readretry operation Tag-B Retry1 that was previously performed. In otherwords, the Tag-C second read retry operation Tag-C Retry2 may beperformed using a read voltage changed based on information on a readvoltage close to the more optimum read voltage searched as the result ofthe defense code operation in the Tag-B first read retry operation Tag-BRetry1 that was previously performed. As a result, the Tag-C ECCoperation to the Tag-C data output (“Tag-C Data-out”) through the Tag-Csecond read retry operation Tag-C Retry2 may immediately pass (“Tag-CPass”).

In other words, the memory device 1100 may perform a defense codeoperation corresponding to a first tag read operation and then enterinto a defense code operation corresponding to a second tag readoperation before the ECC operation to first tag data read through thedefense code operation corresponding to the first tag operation iscompleted. In this case, the memory device 1100 may not use a result ofthe defense code operation corresponding to the first tag read operationin the defense code operation corresponding to the second tag readoperation. In other words, the result of the defense code operationcorresponding to the first tag read operation may be used in the defensecode operation corresponding to another tag read operation after it isdetermined that the ECC operation on the first tag data has passed.

As another example, the memory device 1100 may perform a defense codeoperation corresponding to a first tag read operation and then enterinto a defense code operation corresponding to a second tag readoperation before the ECC operation to first tag data read through thedefense code operation corresponding to the first tag read operation iscompleted. In this case, the memory device 1100 may use a result of thedefense code operation corresponding to the first tag read operation inthe defense code operation corresponding to the second tag readoperation. In other words, the result of the defense code operationcorresponding to the first tag read operation may be used in the defensecode operation corresponding to another tag read operation before it isdetermined that the ECC operation on the first tag data has passed.

FIG. 13 is a diagram illustrating a method for performing a defense codeoperation between a plurality of tags, according to another embodimentof the present disclosure.

Referring to FIG. 13, the memory device 1100 may first receive Tag-ARead command from the memory controller 1200 and then perform a Tag-ARead operation in response to the Tag-A Read command. After the Tag-ARead operation is completed, Tag-A data read through the Tag-A Readoperation may be output (“Tag-A Data-out”). The ECC circuit 730 of thememory controller 1200 may perform a Tag-A ECC operation on the Tag-Adata. The Tag-A ECC operation on the Tag-A data may fail (“Tag-A Fail”).While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-A ECC operation on the Tag-A data after the memory device 1100outputs the Tag-A data (“Tag-A Data-out”), the memory controller 1200may input a Tag-B Read command to the memory device 1100, and perform aTag-B Read operation corresponding to the Tag-B Read command. After theTag-B Read operation is completed, the memory device 1100 may outputTag-B data (“Tag-B Data-out”) read through the Tag-B Read operation. TheECC circuit 730 of the memory controller 1200 may perform a Tag-B ECCoperation on the Tag-B data. At this time, the Tag-B ECC operation onthe Tag-B data may fail (“Tag-B Fail”).

While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-B ECC operation on the Tag-B data after the memory device 1100outputs the Tag-B data (“Tag-B Data-out”), the memory controller 1200may input Tag-C Read command to the memory device 1100, and perform aTag-C Read operation corresponding to the Tag-C read command. After theTag-C Read operation is completed, the memory device 1100 may output theTag-C data (“Tag-C Data-out”) read through the Tag-C Read operation. TheECC circuit 730 of the memory controller 1200 may perform a Tag-C ECCoperation on the Tag-C data. At this time, the Tag-C ECC operation onthe Tag-C data may fail (“Tag-C Fail”).

While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-C ECC operation on the Tag-C data after the memory device 1100outputs the Tag-C data, the memory controller 1200 may input Tag-A firstread retry command Tag-A Retry1 to the memory device 1100, and thememory device 1100 may perform a read retry operation corresponding tothe Tag-A first read retry command Tag-A Retry1, i.e., a defense codeoperation. In other words, the memory device 1100 enters into a defensecode operation corresponding to the Tag-A read operation. A Tag-A firstread retry operation Tag-A Retry1 may be performed in a voltagecondition different from that of the Tag-A read operation. In otherwords, the Tag-A first read retry operation Tag-A Retry1 may beperformed using a new read voltage or an operation of searching for anoptimum read voltage and a read retry operation using the optimum readvoltage, i.e., a defense code operation, which are described withreference to FIG. 9.

After the Tag-A first read retry operation Tag-A Retry1 is completed,the Tag-A data output through the Tag-A first read retry operation Tag-ARetry1 may be output (“Tag-A Data-out”). The ECC circuit 730 of thememory controller 1200 may perform a Tag-A ECC operation on the Tag-Adata. The Tag-A ECC operation on the Tag-A data may fail (“Tag-A Fail”).While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-A ECC operation on the Tag-A data after the memory device 1100outputs the Tag-A data (“Tag-A Data-out”), the memory controller 1200may provide Tag-B first read retry command Tag-B Retry1 to the memorydevice 1100, and the memory device 1100 may perform a read retryoperation corresponding to the Tag-B first read retry command Tag-BRetry1, i.e., a defense code operation. In other words, the memorydevice 1100 enters into a defense code operation corresponding to theTag-B read operation. A Tag-B first read retry operation Tag-B Retry1may be performed in a voltage condition different from that of the Tag-Bread operation. In other words, the Tag-B first read retry operationTag-B Retry1 may be performed using a new read voltage or an operationof searching for an optimum read voltage and a read retry operationusing the optimum read voltage, i.e., a defense code operation, whichare described with reference to FIG. 9.

After the Tag-B first read retry operation Tag-B Retry1 is completed,the Tag-B data read through the Tag-B first read retry operation Tag-BRetry1 may be output (“Tag-B Data-out”). The ECC circuit 730 of thememory controller 1200 may perform a Tag-B ECC operation on the Tag-Bdata. At this time, the Tag-B ECC operation on the Tag-B data may pass(“Tag-B Pass”).

After memory device 1100 outputs the Tag-B data (“Tag-B Data-out”), thememory controller 1200 may input a Tag-D program command to the memorydevice 1100, and the memory device 1100 may perform a Tag-D programoperation in response to the Tag-D program command.

After the Tag-D program operation in response to the Tag-D programcommand is ended, the memory controller 1200 may input a Tag-C firstread retry command Tag-C Retry1 to the memory device 1100, and thememory device 1100 may perform a read retry operation corresponding tothe Tag-C first read retry command Tag-C Retry1, i.e., a defense codeoperation. In other words, the memory device 1100 enters into a defensecode operation corresponding to the Tag-C read operation. At this time,the Tag-C first read retry operation Tag-C Retry1 may use the result ofthe defense code operation in the Tag-B first read retry operation Tag-BRetry1 that was previously performed. In other words, the Tag-C firstread retry operation Tag-C Retry1 may be performed using a read voltagechanged based on information on a read voltage close to the more optimumread voltage searched as the result of the defense code operation in theTag-B first read retry operation Tag-B Retry1 that was previouslyperformed. As a result, the Tag-C ECC operation to the Tag-C data readto be output (“Tag-C Data-out”) through the Tag-C first read retryoperation Tag-C Retry1 may immediately pass (“Tag-C Pass”).

Unlike the embodiments described with reference to FIGS. 10 to 12, inthe embodiment described with reference to FIG. 13, information on aread voltage searched as a result of a defense code operationcorresponding to a first tag read operation can be applied to a defensecode operation corresponding to a second tag read operation that is notyet entered into or is newly entered. In other words, unlike theembodiments described with reference to FIGS. 10 to 12, the result ofthe defense code operation corresponding to the first tag read operationcan be used in a read retry operation corresponding to the second tagread operation even when the memory device 1100 does not still enterinto a defense code operation corresponding to the second tag readoperation at a point of time when the ECC correction of the read retryoperation passes based on the result of the defense code operationcorresponding to the first tag read operation. As a result, it ispossible to decrease read latency.

While the ECC circuit 730 of the memory controller 1200 is performingthe Tag-C ECC operation on the Tag-C data after the memory device 1100outputs the Tag-C data (“Tag-C Data-out”), the memory controller 1200may input a Tag-A second read retry command Tag-A Retry2 to the memorydevice 1100, and the memory device 1100 may perform a read retryoperation corresponding to the Tag-A second read retry command Tag-ARetry2. At this time, the Tag-A second read retry operation Tag-A Retry2may use the result of the defense code operation in the Tag-B first readretry operation Tag-B Retry1 that was previously performed. In otherwords, the Tag-A second read retry operation Tag-A Retry2 may beperformed using a read voltage changed based on information on a readvoltage close to the more optimum read voltage searched as the result ofthe defense code operation in the Tag-B first read retry operation Tag-BRetry1 that was previously performed. As a result, the Tag-A ECCoperation to the Tag-A data output (“Tag-A Data-out”) through the Tag-Asecond read retry operation Tag-A Retry2 may immediately pass (“Tag-APass”).

FIG. 14 is a diagram illustrating another embodiment of the memorysystem including the memory controller shown in FIG. 2 and the memorydevice shown in FIG. 3.

Referring to FIG. 14, the memory system 30000 may be implemented as acellular phone, a smart phone, a tablet PC, a personal digital assistant(PDA), or a wireless communication device. The memory system 30000 mayinclude a memory device 1100 and a memory controller 1200 capable ofcontrolling an operation of the memory device 1100. The memorycontroller 1200 may control a data access operation of the memory device1100, e.g., a program operation, an erase operation, a read operation,or the like under the control of a processor 3100.

Data programmed in the memory device 1100 may be output through adisplay 3200 under the control of the memory controller 1200.

A radio transceiver 3300 may transmit/receive radio signals through anantenna ANT. For example, the radio transceiver 3300 may convert a radiosignal received through the antenna ANT into a signal that can beprocessed by the processor 3100. Therefore, the processor 3100 mayprocess a signal output from the radio transceiver 3300 and transmit theprocessed signal to the memory controller 1200 or the display 3200. Thememory controller 1200 may program the signal processed by the processor3100 in the semiconductor memory device 1100.

Also, the radio transceiver 3300 may convert a signal output from theprocessor 3100 into a radio signal, and output the converted radiosignal to an external device through the antenna ANT. An input device3400 is a device capable of inputting a control signal for controllingan operation of the processor 3100 or data to be processed by theprocessor 3100, and may be implemented as a pointing device such as atouch pad or a computer mouse, a keypad, or a keyboard. The processor3100 may control an operation of the display 3200 such that data outputfrom the memory controller 1200, data output from the radio transceiver3300, or data output from the input device 3400 can be displayed throughthe display 3200.

In some embodiments, the memory controller 1200 capable of controllingan operation of the memory device 1100 may be implemented as a part ofthe processor 3100, or be implemented as a chip separate from theprocessor 3100.

FIG. 15 is a diagram illustrating another embodiment of the memorysystem including the memory controller shown in FIG. 2 and the memorydevice shown in FIG. 3.

Referring to FIG. 15, the memory system 40000 may be implemented as apersonal computer (PC), a tablet PC, a net-book, an e-reader, a personaldigital assistant (PDA), a portable multimedia player (PMP), an MP3player, or an MP4 player.

The memory system 40000 may include a memory device 1100 and a memorycontroller 1200 capable of controlling a data processing operation ofthe memory device 1100.

A processor 4100 may output data stored in the memory device 1100through a display 4300 according to data inputted through an inputdevice 4200. For example, the input device 4200 may be implemented as apointing device such as a touch pad or a computer mouse, a keypad, or akeyboard.

The processor 4100 may control the overall operations of the memorysystem 40000, and control an operation of the memory controller 1200. Insome embodiments, the memory controller 1200 capable of controlling anoperation of the memory device 1100 may be implemented as a part of theprocessor 4100, or be implemented as a chip separate from the processor4100.

FIG. 16 is a diagram illustrating another embodiment of the memorysystem including the memory controller shown in FIG. 2 and the memorydevice shown in FIG. 3.

Referring to FIG. 16, the memory system 50000 may be implemented as animage processing device, e.g., a digital camera, a mobile terminalhaving a digital camera attached thereto, a smart phone having a digitalcamera attached thereto, or a tablet PC having a digital camera attachedthereto.

The memory system 50000 may include a memory device 1100 and a memorycontroller 1200 capable of controlling a data processing operation ofthe memory device 1100, e.g., a program operation, an erase operation,or a read operation.

An image sensor 5200 of the memory system 50000 may convert an opticalimage into digital signals, and the converted digital signals may betransmitted to a processor 5100 or the memory controller 1200. Under thecontrol of the processor 5100, the converted digital signals may bedisplayed through a display 5300, or be stored in the memory device 1100through the memory controller 1200. In addition, data stored in thememory device 1100 may be displayed through the display 5300 under thecontrol of the processor 5100 or the memory controller 1200.

In some embodiments, the memory controller 1200 capable of controllingan operation of the memory device 1100 may be implemented as a part ofthe processor 5100, or be implemented as a chip separate from theprocessor 5100.

FIG. 17 is a diagram illustrating another embodiment of the memorysystem including the memory controller shown in FIG. 2 and the memorydevice shown in FIG. 3.

Referring to FIG. 17, the memory system 70000 may be implemented as amemory card or a smart card. The memory system 70000 may include amemory device 1100, a memory controller 1200, and a card interface 7100.

The memory controller 1200 may control data exchange between the memorydevice 1100 and the card interface 7100. In some embodiments, the cardinterface 7100 may be a secure digital (SD) card interface or amulti-media card (MMC) interface, but the present disclosure is notlimited thereto.

The card interface 7100 may interface data exchange between a host 60000and the memory controller 1200 according to a protocol of the host60000. In some embodiments, the card interface 7100 may support auniversal serial bus (USB) protocol and an inter-chip (IC)-USB protocol.Here, the card interface 7100 may mean hardware capable of supporting aprotocol used by the host 60000, software embedded in the hardware, or asignal transmission scheme.

According to the present disclosure, a result of a defense codeoperation corresponding to a tag, which was previously performed, isused for a tag on which the defense code operation is to be performednext time, so that it is possible to decrease read latency of the memorysystem.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the present disclosure asset forth in the following claims.

What is claimed is:
 1. A method for operating a memory system, themethod comprising: performing a first read operation on a first pagewith a first bias condition in response to a first tag; performing asecond read operation on a second page in response to a second tag; andthen performing a first read retry operation on the first pagecorresponding to the first tag, with a second bias condition differentfrom the first bias condition; and performing a second read retryoperation on the second page corresponding to the second tag, wherein,in response to a success of an error correction operation on data outputthrough the first read retry operation, the second read retry operationon the second page is performed based on the second bias condition, andwherein the performing the second read retry operation is started beforethe error correction operation on the data output through the first readretry operation is completed.
 2. The method of claim 1, wherein thefirst page and the second page are included in a same memory block. 3.The method of claim 2, wherein the first page and the second page areincluded in a same physical page.
 4. The method of claim 3, wherein thefirst page is one logical page of the same physical page and the secondpage is another logical page other than the one logical page of the samephysical page.
 5. The method of claim 3, wherein the first pagerepresent data of one sector among the plurality of sectors in onelogical page of a physical page and the second page represent data ofanother sector other than the one sector in the one logical page.
 6. Amemory system, comprising: a data storage region including a first pageand a second page; and a controller configured to control a readoperation on the data storage region, to control a read retry operationon the data storage region with a different bias condition from the readoperation, and to perform an error correction operation on data outputthrough the read retry operation or the read retry operation, wherein,when the error correction operation on data provided from the read retryoperation on the first page succeeds after starting the read operationon the second page, the controller controls the read retry operation onthe second page based on the bias condition of the read retry operationon the first page, and wherein the read operation on the second page isstarted before the error correction operation on the data provided fromthe read retry operation on the first page is completed.
 7. The memorysystem of claim 6, wherein the first page and the second page areincluded in a same memory block.
 8. The memory system of claim 6,wherein the first page and the second page are included in a samephysical page.
 9. The memory system of claim 8, wherein the first pageis one logical page of the same physical page and the second page isanother logical page other than the one logical page of the samephysical page.
 10. The memory system of claim 8, wherein the first pagerepresent data of one sector among the plurality of sectors in onelogical page of a physical page and the second page represent data ofanother sector other than the one sector in the one logical page.